s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 1 (9) document number 85059 mosmic ? for tvtuner prestage with 9 v supply voltage mosmic - mos m onolithic i ntegrated c ircuit electrostatic sensitive device. observe precautions for handling. applications low noise gain controlled input stages in uhf-and vhf- tuner with 9 v supply voltage. g2 g1 rf in agc s d v dd c block rfc rf out 94 9296 c block c block features integrated gate protection diodes low noise figure high gain biasing network on chip improved cross modulation at gain reduction high agc-range smd package 13 579 21 4 3 94 9279 s913t marking: 913 plastic case (sot 143) 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 95 10831 2 1 43 94 9278 s913tr marking: 13r plastic case (sot 143r) 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 2 1 3 4 13 566 13 654 S913TRW marking: w13 plastic case (sot 343r) 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 2 (9) document number 85059 absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit drain - source voltage v ds 12 v drain current i d 30 ma gate 1/gate 2 - source peak current + i g1/g2sm 10 ma gate 1/gate 2 - source voltage + v g1/g2sm 6 v total power dissipation t amb 3 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg 55 to +150 c maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit channel ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu r thcha 450 k/w electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit gate 1 - source breakdown voltage + i g1s = 10 ma, v g2s = v ds = 0 + v (br)g1ss 7 10 v gate 2 - source breakdown voltage + i g2s = 10 ma, v g1s = v ds = 0 + v (br)g2ss 7 10 v gate 1 - source +v g1s = 5 v, v g2s = v ds = 0 +i g1ss 50 a leakage current v g1s = 5 v, v g2s = v ds = 0 i g1ss 100 a gate 2 - source leakage current + v g2s = 5 v, v g1s = v ds = 0 + i g2ss 20 na drain current v ds = 9 v, v g1s = 0, v g2s = 4 v i dss 50 500 a self-biased operating current v ds = 9 v, v g1s = nc, v g2s = 4 v i dsp 7 10 14 ma gate 2 - source cut-off voltage v ds = 9 v, v g1s = nc, i d = 100 a v g2s(off) 1.0 v caution for gate 1 switch-off mode: no external dc-voltage on gate 1 in active mode! switch-off at gate 1 with v g1s < 0.7 v is feasible. using open collector switching transistor (inside of pll), insert 10 k collector resistor.
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 3 (9) document number 85059 electrical ac characteristics v ds = 9 v, v g2s = 4 v, f = 1 mhz , t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit forward transadmittance z y 21s z 20 24 28 ms gate 1 input capacitance c issg1 2.1 2.5 pf feedback capacitance c rss 20 ff output capacitance c oss 0.9 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 26 db g g s = 3,3 ms, g l = 1 ms, f = 800 mhz g ps 16.5 20 db agc range v ds = 9 v, v g2s = 1 to 4 v, f = 800 mhz g ps 40 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f 1 db g g s = 3,3 ms, g l = 1 ms, f = 800 mhz f 1.3 db common source sparameters v ds = 9 v , v g2s = 4 v , z 0 = 50 t amb = 25 c, unless otherwise specified s11 s21 s12 s22 f/mhz log mag ang log mag ang log mag ang log mag ang db deg db deg db deg db deg 50 0.02 4.1 7.50 174.9 63.74 88.2 0.13 1.6 100 0.04 7.9 7.41 169.0 57.58 85.0 0.14 3.0 150 0.12 11.9 7.31 162.9 54.15 82.1 0.16 4.5 200 0.19 15.7 7.20 157.3 51.78 79.3 0.18 5.8 250 0.29 19.7 7.07 150.8 50.15 76.8 0.20 7.6 300 0.41 23.1 6.94 145.8 48.89 75.0 0.24 8.9 350 0.52 26.8 6.71 140.0 47.92 72.9 0.27 10.2 400 0.66 30.3 6.59 134.8 47.25 71.2 0.31 11.7 450 0.81 33.6 6.34 129.9 46.77 69.8 0.35 12.9 500 0.97 36.9 6.17 124.6 46.47 68.5 0.40 14.5 550 1.12 40.3 5.96 119.7 46.32 67.8 0.44 15.7 600 1.28 43.3 5.74 114.7 46.34 68.8 0.49 17.0 650 1.42 46.5 5.55 110.6 46.24 70.0 0.54 18.2 700 1.55 49.6 5.36 105.8 46.36 71.0 0.57 19.4 750 1.70 52.4 5.17 101.5 46.67 72.9 0.62 20.8 800 1.87 55.4 4.98 97.0 47.12 76.2 0.66 22.0 850 1.99 58.4 4.84 93.0 47.41 81.6 0.71 23.3 900 2.11 61.3 4.68 88.4 47.72 89.3 0.74 24.8 950 2.24 64.2 4.52 84.5 47.55 98.3 0.79 25.9 1000 2.38 67.1 4.31 80.3 47.07 104.4 0.86 27.3 1050 2.50 69.9 4.14 75.8 46.96 110.4 0.95 28.4 1100 2.67 72.8 3.96 71.9 46.72 119.7 0.98 29.7 1150 2.72 75.7 3.90 67.6 45.93 128.4 1.01 31.1 1200 2.85 78.5 3.80 64.2 44.91 137.0 1.03 32.4 1250 2.95 81.4 3.67 60.0 43.76 144.2 1.06 33.8 1300 3.06 84.4 3.55 55.7 42.39 149.1 1.15 35.0
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 4 (9) document number 85059 typical characteristics (t amb = 25 c unless otherwise specified) 0 25 50 75 100 0 50 100 150 200 250 p total power dissipation ( mw ) tot t amb ambient temperature ( 5 c ) 150 95 10771 125 figure 1. total power dissipation vs. ambient temperature 02 4 6 8 0 4 8 12 16 20 i drain current ( ma ) d v ds drain source voltage ( v ) 95 10772 135 79 v g2s =5v 2v 1v 3v 4v figure 2. drain current vs. drain source voltage 012 34 0 4 8 12 16 20 i drain current ( ma ) d v g2s gate 2 source voltage ( v ) 95 10773 v ds =9v figure 3. drain current vs. gate 2 source voltage 0 10 20 30 40 95 10774 012 34 v g2s gate 2 source voltage ( v ) v ds =9v f=200mhz y forward transadmittance ( ms ) 21s figure 4. forward transadmittance vs. gate 2 source voltage c gate 1 input capacitance ( pf ) issg1 95 10775 0 1 2 3 4 01 2 3 4 v g2s gate 2 source voltage ( v ) 6 5 v ds =9v f=200mhz figure 5. gate 1 input capacitance vs. gate 2 source voltage 357 9 0 0.5 1 1.5 2 c output capacitance ( pf ) oss v ds drain source voltage ( v ) 11 95 11145 v g2s =4v f=200mhz figure 6. output capacitance vs. drain source voltage
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 5 (9) document number 85059 95 10776 60 40 20 0 20 s transducer gain ( db ) 2 012 34 v g2s gate 2 source voltage ( v ) 21 v ds =9v f=800mhz figure 7. transducer gain vs. gate 2 source voltage cm cross modulation ( db ) 95 11146 0 20 40 60 80 234 56 v g2s gate 2 source voltage ( v ) v ds =9v f=800mhz figure 8. cross modulation vs. gate 2 source voltage
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 6 (9) document number 85059 v ds = 9 v, v g2s = 4 v , z 0 = 50 s 11 12 952 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 50 1300mhz 300 550 800 1050 figure 9. input reflection coefficient s 21 0 5 90 5 90 5 1.0 2.0 150 5 120 5 60 5 30 5 120 5 60 5 30 5 12 954 50 1300mhz 300 550 800 1050 figure 10. forward transmission coefficient s 12 0 5 90 5 180 5 90 5 0.008 0.016 150 5 120 5 60 5 30 5 120 5 60 5 30 5 12 953 50 1300mhz 550 1050 figure 11. reverse transmission coefficient s 22 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 12 955 50 1300mhz 550 figure 12. output reflection coefficient
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 7 (9) document number 85059 dimensions of s913t in mm 96 12240 dimensions of s913tr in mm 96 12239
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 8 (9) document number 85059 dimensions of S913TRW in mm 96 12238
s913t/s913tr/S913TRW vishay semiconductors www.vishay.com rev. 3, 20-jan-99 9 (9) document number 85059 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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